Samsung 990 PRO 2TB PCIe 4.0 NVMe M.2 SSD with Heatsink – 7,450MB/s

By Item#: SAMSUNG MZ-V9P2T0CW

R12859,00

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Product information

Samsung 990 PRO 2TB PCIe 4.0 NVMe M.2 SSD with Heatsink

The Samsung 990 PRO 2TB with Heatsink is a high-performance PCIe Gen4 NVMe SSD built for enthusiast gaming PCs, demanding workstations and PlayStation 5 storage upgrades. Delivering sequential read speeds of up to 7,450MB/s and sequential write speeds of up to 6,900MB/s, it provides fast loading, responsive application performance and rapid file transfers.

Samsung’s in-house controller, V-NAND TLC and 2GB LPDDR4 cache help deliver random performance of up to 1,400,000 IOPS read and 1,550,000 IOPS write. The integrated heatsink helps dissipate heat during sustained workloads while keeping the drive within a compact M.2 2280 form factor.

Specs & Features:

  • Capacity: 2TB
  • Interface: PCIe 4.0 x4
  • Protocol: NVMe 2.0
  • Form Factor: M.2 2280
  • Sequential Read: Up to 7,450MB/s
  • Sequential Write: Up to 6,900MB/s
  • Random Read: Up to 1,400,000 IOPS
  • Random Write: Up to 1,550,000 IOPS
  • NAND: Samsung V-NAND TLC
  • Controller: Samsung In-House Controller
  • Cache: 2GB LPDDR4 SDRAM
  • Cooling: Integrated Heatsink
  • Endurance: 1,200 TBW
  • Encryption: AES 256-bit / TCG Opal / IEEE1667
  • TRIM Support: Yes
  • SMART Support: Yes
  • Compatibility: Client PCs and PlayStation 5
  • Model: 990 PRO with Heatsink
  • SKU: MZ-V9P2T0CW
  • Warranty: 5 Years or 1,200 TBW

Flagship Gen4 storage performance with integrated cooling for gaming, professional workloads and console expansion.

Please Note: Maximum performance requires a compatible PCIe 4.0 x4 M.2 slot. Actual speeds may vary depending on system configuration and workload.

More SSD Storage:
Browse SSDs at Chaos Computers

Manufacturer:
Visit Samsung 990 PRO Manufacturer Page

Specifications

General
Brand Samsung
Series 990 PRO
Model MZ-V9P2T0CW
Product Type Internal SSD
Colour Black (with heatsink)
Package Quantity 1
Performance
Sequential Read Speed Up to 7,450 MB/s
Sequential Write Speed Up to 6,900 MB/s
Random Read (4KB, QD32) Up to 1,400,000 IOPS
Random Write (4KB, QD32) Up to 1,550,000 IOPS
Memory
Cache Memory 2 GB Low Power DDR4 SDRAM
Storage Memory Samsung V-NAND 3-bit MLC
Physical Specifications
Form Factor M.2 (2280)
Dimensions (WxHxD) 80 x 24.3 x 8.2 mm (with heatsink)
Weight Max 28.0 g
Power
Average Power Consumption 5.5 W
Maximum Power Consumption 8.5 W (Burst mode)
Idle Power Consumption Max 55 mW
Environmental
Operating Temperature 0 – 70 ℃
Security
Encryption Support AES 256-bit Encryption (Class 0), TCG/Opal IEEE1667
Warranty
Warranty 5-Year Limited Warranty or 1,200 TBW Limited Warranty
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